SK Hynix develops the world's fastest high-bandwidth DRAM based on HBM2E TechSpot

Hot on the heels of Samsung and its "Flashbolt" HBM2E memory, SK Hynix has now become the second DRAM manufacturer to announce its next-gen HBM2E that boast 3.6Gbps (vs 3.2Gbps of Samsung's Flashbolt) speed performance per pin with 1,024 data I/Os.





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